12N60 DATASHEET PDF

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You will receive an email when your request is approved. Your request has been submitted for approval. This advanced technology has been 12n6 tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Neither this Agreement, nor dataaheet of the rights or obligations herein, may be assigned or transferred by Licensee without the express prior written consent of ON Semiconductor, and any attempt to do so in violation of the foregoing shall be null and void.

(PDF) 12N60 Datasheet download

It is mainly suitable datashwet active power factor correction and switching mode power supplies. ON Semiconductor shall have the right to terminate this Agreement upon written notice to Licensee if: Request for this document already exists and is waiting for approval.

Previously Viewed Products Select Product This Agreement may be executed in counterparts, each of which shall be deemed to be an original, and which together shall constitute one and the same agreement. The transistor can be used in various 1.

F Applications Pin 1: Upon the effective date of termination of this Agreement, all licenses granted to Licensee hereunder shall terminate and Licensee shall cease all use, copying, modification and distribution of the Content and shall promptly either destroy or return to ON Semiconductor all copies of the Content in Licensee’s possession or under Licensee’s control.

The device ha 1. TO-3P They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching 122n60 1.

Licensee shall not distribute externally or disclose to any Customer or to any third party any reports or statements that directly compare the speed, functionality or other performance results dattasheet characteristics of the Software with any similar third party products without the express 12n600 written consent of ON Semiconductor in each instance; provided, however, that Licensee may disclose such reports or statements to Licensee’s consultants i that have a need to have access to such reports or statements dataxheet purposes of vatasheet license grant of this Agreement, and ii that have entered into a written confidentiality agreement with Licensee no less restrictive than that certain NDA.

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The transistor can be used in various p 1.

Low Gate Charge Typ. The transistor can be used in vario 1.

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12N60 equivalent datasheet & applicatoin notes – Datasheet Archive

Any such audit shall not interfere with the ordinary business operations of Licensee and shall be conducted at the expense of ON Semiconductor. It is designed to have Better characteristics, such as fast switching time, low gate TO TOF charge, minimized on-state resistance and withstanding high energy pulse in the avalanche and 1.

The following Sections of this Agreement shall survive the termination or expiration of this Agreement for any reason: Licensee is and shall be solely responsible and liable for any Modifications and for any Licensee Products, and for testing the Software, Modifications and Licensee Products, and for testing and implementation of the functionality of the Software and Modifications with the Licensee Products.

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Within 30 days after the termination of the Agreement, Licensee shall furnish a statement certifying that all Content and related documentation have been destroyed or returned to ON Semiconductor. Licensee agrees that it shall comply fully with all relevant and applicable export laws and regulations of the United States or foreign governments “Export Laws” to ensure that neither the Content, nor any direct product thereof is: Except as expressly permitted in this Agreement, Licensee shall not itself and shall restrict Customers from: The transistor can be used in various po 1.

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These devices have the hi 1. These devices are suited dataheet high efficiency switch mode power supply. Licensee agrees that it shall not issue any press releases containing, catasheet advertise, reference, reproduce, use or display, ON Semiconductor’s name or any ON Semiconductor trademark without ON Semiconductor’s express prior written consent in each instance; provided, however, that Licensee may indicate that the Licensee Product is interoperable with ON Semiconductor Products in product documentation and collateral material for the Licensee Product.

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This advanced technology has dataaheet especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The term of this agreement is perpetual unless terminated by ON Semiconductor as set forth herein. These devices are 1.

To minimize on-state resistance, provide superior 1. The device has the high i 1. Nothing contained in this Agreement limits a party from filing a 21n60 complaint, or the party’s ability to communicate directly to, or otherwise participate in either: Notwithstanding any terms to the contrary in any non-disclosure agreements between the Parties, Licensee shall treat this Agreement and 1n60 Content as ON Semiconductor’s “Confidential Information” including: Any provision of this Agreement which is held to be invalid or unenforceable by a court datashet any jurisdiction shall, as to such jurisdiction, be severed from this Agreement and ineffective to the extent of such invalidity or unenforceability without invalidating the remaining portions hereof or affecting the validity or enforceability of such provision in any other jurisdiction.